32A Leninsky Prospekt
Moscow , 119991
United States
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences
InSb nanocrystals, Si(111), Solid phase epitaxy, IR detectors
CrSi and CrSi2 filmscrystal structureRaman peakstwo-layer thermoelectromotive force model Seebeck coefficient and power factorpromising thermoelectric material
Thin Cr3Si Films Grown on Al2O3(001) by MBE: Crystalline Structure, Electronic, Phonon and Optical Properties
Cr3Siband structure new ground statethin filmscrystal structureRaman phonons