MBE, AlGaN, PL
A3.MBE;B1.digital alloy;B2.III-V/Si monolithically epitaxy;B2.short-wave infrared InGaAs, A1.Interfaces, A1.Crystal structure
oxygen induced stacking fault, warpage, crack, GaN, rapid thermal annealing
multi-junction solar cell, Multiple quantum wells (MQWs), Absolute electroluminescence (EL), Luminescence coupling, Characteristics diagnosis