Author Page for Huimin Chen

Impact of Thickness in Ultra-Thin Ald-Processed Hfo2 Gate Dielectric on the Performance of Low-Operating Voltage Thin-Film Transistors

Number of pages: 23 Posted: 22 Jan 2024

Minyu Chen, Huimin Chen, Eduardo Solano, Daniel Hermida Merino, Wenqiang Hua, Xingwei Ding, Bin Wei, Yingjie Liao and Bing Wu

Shanghai University, Shanghai University, ALBA Synchrotron, University of Vigo, Chinese Academy of Sciences (CAS) - Shanghai Advanced Research Institute, Shanghai University, Shanxi Datong University, Shanghai University and European Synchrotron Radiation Facility (ESRF)

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Abstract:

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Impact of Thickness in Ultra-Thin Atomic-Layer-Deposition-Processed Hfo2 Gate Dielectric on the Performance of Low-Operating Voltage Thin-Film Transistors

Number of pages: 24 Posted: 31 Aug 2024

Minyu Chen, Huimin Chen, Eduardo Solano, Daniel Hermida Merino, Wenqiang Hua, Xingwei Ding, Bin Wei, Yingjie Liao and Bing Wu

Shanghai University, Shanghai University, ALBA Synchrotron, University of Vigo, Chinese Academy of Sciences (CAS) - Shanghai Advanced Research Institute, Shanghai University, Shanxi Datong University, Shanghai University and European Synchrotron Radiation Facility (ESRF)

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Huimin Chen

Shanghai University

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Scholarly Papers (2)

Impact of Thickness in Ultra-Thin Ald-Processed Hfo2 Gate Dielectric on the Performance of Low-Operating Voltage Thin-Film Transistors

Abstract:

Impact of Thickness in Ultra-Thin Atomic-Layer-Deposition-Processed Hfo2 Gate Dielectric on the Performance of Low-Operating Voltage Thin-Film Transistors

Abstract: