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Li Gao

affiliation not provided to SSRN

  • affiliation not provided to SSRN

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Electrical Uniformity Analyses on 12-Inch Si-Based Hf0.5zr0.5o2 Ferroelectric Capacitor Devices by Atomic Layer Deposition

Number of pages: 16 Posted: 31 Jan 2024
Wen-Juan Ding, Yu Liu, Zhi-Qiang Xiao, Li Gao, Lin Zhu, Xiang Li, Wei-Ming Li and Aidong Li
Nanjing University, Nanjing University, affiliation not provided to SSRN, affiliation not provided to SSRN, Nanjing University, affiliation not provided to SSRN, affiliation not provided to SSRN and Nanjing University
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Abstract:

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Ferroelectric random access memory, atomic layer deposition, Hf0.5Zr0.5O2 ferroelectric thin film, 12-inch Si wafer, electrical uniformity