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Kaiwei Dai

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SCHOLARLY PAPERS

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High Breakdown Voltage Β-Ga2o3 Schottky Barrier Diode with Fluorine-Implanted Termination

Number of pages: 12 Posted: 13 May 2024
Xiaorong Luo, Linyao Hao, Yuxi Wei, Kaiwei Dai, Xiaosong Peng, Zhuolin Jiang and Yuxin Wu
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Abstract:

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fluoride ions， trench, beta-phase gallium oxide (β-Ga2O3), Schottky barrier diode (SBD)