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Xiaorong Luo

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

3

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143

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0

Scholarly Papers (3)

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1.

Improvement of Single Event Effects in Inp-Based Hemt with a Composite Channel of Ingaas/Inas/Ingaas

Number of pages: 11 Posted: 02 May 2022
Shuxiang Sun, Pengfei Zang, Xintong Xie, Haitao Wu, Ruxian Yao and Xiaorong Luo
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 55 (1,010,164)

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InP-based HEMT, composite channel, single event effects, drain current

2.

Novel High-Voltage Gan Cavet with High Threshold Voltage and Low Reverse Conduction Loss

Number of pages: 12 Posted: 24 Feb 2024
Chengtao Luo, Cheng Yang, Zhijia Zhao, Xintong Xie, YuXi Wei, Jie Wei, Jingyu Shen, Jinpeng Qiu and Xiaorong Luo
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 51 (1,052,702)

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Gallium nitride, Vertical transistors, Reverse conduction, Threshold voltage, Leakage current, Breakdown voltage

3.

High Breakdown Voltage Β-Ga2o3 Schottky Barrier Diode with Fluorine-Implanted Termination

Number of pages: 12 Posted: 13 May 2024
Xiaorong Luo, Linyao Hao, Yuxi Wei, Kaiwei Dai, Xiaosong Peng, Zhuolin Jiang and Yuxin Wu
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 37 (1,222,651)

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fluoride ions， trench, beta-phase gallium oxide (β-Ga2O3), Schottky barrier diode (SBD)