default author photo

Hong Zhang

affiliation not provided to SSRN

SCHOLARLY PAPERS

1

DOWNLOADS

35

TOTAL CITATIONS

0

Scholarly Papers (1)

1.

Proton Irradiation Induced Single-Event Burnout Effect in P-Gan Power Devices

Number of pages: 12 Posted: 03 Jun 2024
affiliation not provided to SSRN, Northwest Institute of Nuclear Technology, affiliation not provided to SSRN, Northwest Institute of Nuclear Technology, Northwest Institute of Nuclear Technology, Xiangtan University and affiliation not provided to SSRN
Downloads 35 (1,249,711)

Abstract:

Loading...

P-gate GaN power device, Proton irradiation, Single-event burnout, Monte Carlo and TCAD simulation, Charge transport and deposition