Wen-sheng Zhao

Hangzhou Dianzi University

China

  • Hangzhou Dianzi University

SCHOLARLY PAPERS

3

DOWNLOADS

58

TOTAL CITATIONS

0

Scholarly Papers (3)

Actions:
Email selected abstracts
1.

An Improved 4h-Sic Trench Mos Barrier Schottky Diode with Current Spreading Layer and Low Resistance Layer

Number of pages: 29 Posted: 16 Sep 2024
Hai-tao Ge, Wang-zi-xuan Zhen, Chenghao Yu, Wen-sheng Zhao, Haomin Guo and Xiaodong Wu
Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University and Hangzhou Dianzi University
Downloads 25 (1,100,721)

Abstract:

Loading...

4H-SiC, TMBS, analytical model, specific on-resistance, double epitaxy, figure of merit (FOM)

2.

4h-Sic Super-Junction Trench Mos Barrier Schottky Structure with Enhanced Figure of Merit

Number of pages: 33 Posted: 28 Apr 2025
Hai-tao Ge, Chenghao Yu, Masayuki Yamamoto, Haomin Guo, Da-Wei Wang, Chun-Sheng Jiang and Wen-sheng Zhao
Hangzhou Dianzi University, Hangzhou Dianzi University, University of Yamanashi, Hangzhou Dianzi University, Hangzhou Dianzi University, Guangxi Normal University and Hangzhou Dianzi University
Downloads 24 (1,112,905)

Abstract:

Loading...

4H-SiC, Super-junction (SJ), TMBS, analytical model, figure of merit (FOM)

3.

Numerical Investigation on Buried Gate and Drift Region with P-Type Blocks in Trench Soi Ldmos

Number of pages: 11 Posted: 29 Oct 2024
Yue Hu, Tianci Wang, Changmiao Wu, Jing Wang, Yuhua Cheng, Wen-sheng Zhao and Gaofeng Wang
Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University and Hangzhou Dianzi University
Downloads 9 (1,287,473)

Abstract:

Loading...

Breakdown voltage (BV), on-resistance (Ron), lateral double-diffused MOS (LDMOS), silicon-on-insulator (SOI), trench