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Yue Hu

Hangzhou Dianzi University

China

SCHOLARLY PAPERS

1

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0

Scholarly Papers (1)

1.

Numerical Investigation on Buried Gate and Drift Region with P-Type Blocks in Trench Soi Ldmos

Number of pages: 11 Posted: 29 Oct 2024
Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University, Hangzhou Dianzi University and Hangzhou Dianzi University
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Abstract:

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Breakdown voltage (BV), on-resistance (Ron), lateral double-diffused MOS (LDMOS), silicon-on-insulator (SOI), trench