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Philippe Boucaud

affiliation not provided to SSRN

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Investigation of Mos2 Growth on Gan/Sapphire Substrate Using Molecular Beam Epitaxy

Number of pages: 25 Posted: 07 Oct 2024
Mohamed Al Khalfioui, Minh Tuan Dau, Zineb Bouyid, Ileana Florea, philippe vennegues, Julien BRAULT, Stéphane Vézian, Adrien Michon, Yvon Cordier and Philippe Boucaud
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
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Abstract:

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A1. Characterization, A1. Nucleation, A1. Interface, A1. Substrate, A3. Molecular beam epitaxy, B2. Semiconducting materials