default author photo

Adrien Michon

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

2

DOWNLOADS

82

TOTAL CITATIONS

0

Scholarly Papers (2)

Actions:
Email selected abstracts
1.

Atomic Resolution Interface Structure and Vertical Current Injection in Highly Uniform Mos2 Heterojunctions with Bulk Gan

Number of pages: 19 Posted: 15 Feb 2023
Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte, Gianfranco Sfuncia, Giuseppe Nicotra, Marco Cannas, Simonpietro Agnello, Eric Frayssinet, Yvon Cordier, Adrien Michon, Antal Koos and Bela Pecz
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Centre for Energy Research, Institute of Technical Physics and Materials Science
Downloads 52 (1,041,696)

Abstract:

Loading...

MoS2, Bulk GaN, heterojunctions, aberration corrected TEM, conductive AFM

2.

Investigation of Mos2 Growth on Gan/Sapphire Substrate Using Molecular Beam Epitaxy

Number of pages: 25 Posted: 07 Oct 2024
Mohamed Al Khalfioui, Minh Tuan Dau, Zineb Bouyid, Ileana Florea, philippe vennegues, Julien BRAULT, Stéphane Vézian, Adrien Michon, Yvon Cordier and Philippe Boucaud
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 30 (1,318,317)

Abstract:

Loading...

A1. Characterization, A1. Nucleation, A1. Interface, A1. Substrate, A3. Molecular beam epitaxy, B2. Semiconducting materials