default author photo

Fabrizio Roccaforte

affiliation not provided to SSRN

SCHOLARLY PAPERS

6

DOWNLOADS

283

TOTAL CITATIONS

1

Scholarly Papers (6)

Two-Dimensional Electron Gas Isolation Mechanism in Al0.2ga0.8n/Gan Heterostructure by Low-Energy Ar, C, Fe Ion Implantation

Number of pages: 23 Posted: 16 Mar 2024
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Università degli Studi di Catania and Università degli Studi di Catania
Downloads 46 (1,131,842)

Abstract:

Loading...

two-dimensional electron gas, HEMT, ion implantation, argon, carbon, iron

Two-Dimensional Electron Gas Isolation Mechanism in Al0.2ga0.8n/Gan Heterostructure by Low-Energy Ar, C, Fe Ion Implantation

Number of pages: 46 Posted: 07 May 2024
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Università degli Studi di Catania and Università degli Studi di Catania
Downloads 33 (1,311,254)

Abstract:

Loading...

two-dimensional electron gas, HEMT, ion implantation, argon, Carbon, iron

2.

Atomic Resolution Interface Structure and Vertical Current Injection in Highly Uniform Mos2 Heterojunctions with Bulk Gan

Number of pages: 19 Posted: 15 Feb 2023
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Centre for Energy Research, Institute of Technical Physics and Materials Science
Downloads 52 (1,041,696)

Abstract:

Loading...

MoS2, Bulk GaN, heterojunctions, aberration corrected TEM, conductive AFM

3.

Understanding the Impact of Extended Crystalline Defects on 4h-Sic Power Mosfets by Multiscale Correlative Electrical, Optical and Thermal Characterizations

Number of pages: 19 Posted: 15 Mar 2025
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 48 (1,086,013)

Abstract:

Loading...

SiC power MOSFET, extended crystalline defects, nanoscale electrical characterization

4.

Towards Vertical Schottky Diodes on Bulk Cubic Silicon Carbide (3c-Sic)

Number of pages: 16 Posted: 13 Jul 2022
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 46 (1,109,210)
Citation 1

Abstract:

Loading...

3C-SiC, Pt Schottky contacts, I-V, C-AFM

5.

Large-Area and Optically Uniform Mows2 Alloys by Sulfurization of Ultrathin Mo/W Stacks

Number of pages: 14 Posted: 06 Mar 2025
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Izmir Institute of Technology, Izmir Institute of Technology, affiliation not provided to SSRN, Centre for Energy Research, Institute of Technical Physics and Materials Science and affiliation not provided to SSRN
Downloads 38 (1,209,354)

Abstract:

Loading...

MoS2, WS2, MoxW1-xS2 ternary compounds, sulfurization, photoluminescence

6.

Tunneling and Thermionic Emission as Charge Transport Mechanisms in a W-Based Schottky Contacts on Algan/Gan Heterostructures

Number of pages: 19 Posted: 28 Jun 2024
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, National Research Council (CNR) - Istituto per la Microelettronica e Microsistemi, affiliation not provided to SSRN, Università degli Studi di Catania, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 20 (1,448,301)

Abstract:

Loading...

AlGaN/GaN, Scottky Contacts, Conduction Mechanisms, Metal/AlGaN interface, Conductive Dislocations