United States
Centre for Energy Research, Institute of Technical Physics and Materials Science
Ultra-wide bandgap semiconductors, Germanium oxide, Nucleation, Faceting, Epitaxy
MoS2, Bulk GaN, heterojunctions, aberration corrected TEM, conductive AFM
MoS2, WS2, MoxW1-xS2 ternary compounds, sulfurization, photoluminescence
GaN quantum dots, van der Waals substrate, droplet epitaxy, formation of Ga droplets, structural phase transition
Ca5Si3 film, band structure calculations, absorption coefficient, plasma reflection, Raman peaks, transparent conductor