affiliation not provided to SSRN
B2 GaN-on-Si, A3 NH3-MBE, A1 Buffer Leakage Current, A1 Yellow line in GaN, A1 PL kinetics.
HEMT passivation, AlGaN/GaN, silicon nitride, (√3×√3)R30° superstructure, surface density of states, XPS/UPS/ARUPS
GaN quantum dots, 2D-3D transition, surface kinetics, Reflection high-energy electron diffraction
GaN quantum dots, van der Waals substrate, droplet epitaxy, formation of Ga droplets, structural phase transition
AlGaN/GaN, Si substrate, scattering mechanisms, quantum well width