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Dmitry Protasov

affiliation not provided to SSRN

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SCHOLARLY PAPERS

2

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77

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Scholarly Papers (2)

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1.

Effect of Growth Temperature of Nh3-Mbe Grown Gan-on-Si Layers on Donor Concentration and Leakage Currents

Number of pages: 25 Posted: 08 Sep 2023
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitry Protasov, Sergey Ponomarev, Denis Milakhin and Konstantin Zhuravlev
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 53 (1,052,702)

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B2 GaN-on-Si, A3 NH3-MBE, A1 Buffer Leakage Current, A1 Yellow line in GaN, A1 PL kinetics.

2.

Scattering mechanisms limiting the mobility of two-dimensional electron gas in AlGaN/AlN/GaN-on-Si(111) heterostructures grown by NH3-MBE

Number of pages: 16 Posted: 31 Jan 2026
Dmitry Protasov, Denis Milakhin, Timur Malin and Vladimir Mansurov
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 24 (1,436,435)

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AlGaN/GaN, Si substrate, scattering mechanisms, quantum well width