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Denis Milakhin

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

3

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117

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0

Scholarly Papers (3)

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1.

Effect of Growth Temperature of Nh3-Mbe Grown Gan-on-Si Layers on Donor Concentration and Leakage Currents

Number of pages: 25 Posted: 08 Sep 2023
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitry Protasov, Sergey Ponomarev, Denis Milakhin and Konstantin Zhuravlev
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 53 (1,052,702)

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B2 GaN-on-Si, A3 NH3-MBE, A1 Buffer Leakage Current, A1 Yellow line in GaN, A1 PL kinetics.

2.

Investigation of the Effect of Different Coating Types on the Surface Electronic States of Algan/Gan Heterostructures with 2deg Using X-Ray and Ultraviolet Photoelectron Spectroscopy

Number of pages: 20 Posted: 15 Jul 2023
Vladimir Mansurov, Timur Malin, Vladimir Golyashov, Denis Milakhin and Konstantin Zhuravlev
affiliation not provided to SSRN, affiliation not provided to SSRN, Novosibirsk State University, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 40 (1,183,237)

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HEMT passivation, AlGaN/GaN, silicon nitride, (√3×√3)R30° superstructure, surface density of states, XPS/UPS/ARUPS

3.

Scattering mechanisms limiting the mobility of two-dimensional electron gas in AlGaN/AlN/GaN-on-Si(111) heterostructures grown by NH3-MBE

Number of pages: 16 Posted: 31 Jan 2026
Dmitry Protasov, Denis Milakhin, Timur Malin and Vladimir Mansurov
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 24 (1,436,435)

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AlGaN/GaN, Si substrate, scattering mechanisms, quantum well width