Ga2O3, photodetector, solar-blind, UV photodetector, contact
interface states, Schottky barrier, Ga2O3, neutrality level, Fermi level pinning, surface energy
β-Ga2O3, Heteroepitaxy, MOCVD, Liquid metal printing, Buffer layer
β-Ga2O3, dislocation, single crystal, orientation, etch pits