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Antonio Cantudo

affiliation not provided to SSRN

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Statistical, Simulation and Modeling Analysis of Variability in Memristor with Single and Bilayer Dielectrics of Hfo2 and Al2o3, a Comparison

Number of pages: 23 Posted: 21 Dec 2024
Antonio Cantudo, Francisco Jimenez-Molinos, Pilar Q. Ruiz, Antonio Lopez, Marco Antonio Villena, Mireia B. Gonzalez, Francesca Campabadal and Juan B. Roldán
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Microelectronics Institute of Barcelona, Microelectronics Institute of Barcelona and University of Granada
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Abstract:

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Memristors, resistive memory, resistive switching, variability, coefficient of variation, statistical analysis