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Mireia B. Gonzalez

Microelectronics Institute of Barcelona

SCHOLARLY PAPERS

8

DOWNLOADS

326

TOTAL CITATIONS

1

Scholarly Papers (8)

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1.

On the Chaotic Nature of Random Telegraph Noise in Unipolar Rram Memristor Devices

Number of pages: 33 Posted: 17 Feb 2022
Stavros G. Stavrinides, Michael P. Hanias, Mireia B. Gonzalez, Francesca Campabadal, Yiannis Contoyiannis, Stelios M. Potirakis, Mohamad Moner Al Chawa, Carol de Benito, Ronald Tetzlaff, Rodrigo Picos and Leon O. Chua
International Hellenic University, affiliation not provided to SSRN, Microelectronics Institute of Barcelona, Microelectronics Institute of Barcelona, University of West Attica, University of West Attica, affiliation not provided to SSRN, Universitat de les Illes Balears, affiliation not provided to SSRN, Universitat de les Illes Balears and University of California, Berkeley
Downloads 66 (907,769)

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Memristors, Random Telegraph Noise, Resistive RAM

2.

Variability Estimation in Resistive Switching Devices, a Numerical and Kinetic Monte Carlo Perspective

Number of pages: 30 Posted: 03 Jan 2022
David Maldonado, Samuel Aldana, Mireia B. Gonzalez, Francisco Jimenez-Molinos, Maria Jose Ibañez, Domingo Barrera, Francesca Campabadal and Juan B. Roldán
affiliation not provided to SSRN, affiliation not provided to SSRN, Microelectronics Institute of Barcelona, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Microelectronics Institute of Barcelona and University of Granada
Downloads 61 (951,658)
Citation 1

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Resistive switching memory, RRAM, Parameter extraction, Kinetic Monte Carlo simulation, Variability, Modeling

3.

Statistical, Simulation and Modeling Analysis of Variability in Memristor with Single and Bilayer Dielectrics of Hfo2 and Al2o3, a Comparison

Number of pages: 23 Posted: 21 Dec 2024
Antonio Cantudo, Francisco Jimenez-Molinos, Pilar Q. Ruiz, Antonio Lopez, Marco Antonio Villena, Mireia B. Gonzalez, Francesca Campabadal and Juan B. Roldán
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Microelectronics Institute of Barcelona, Microelectronics Institute of Barcelona and University of Granada
Downloads 45 (1,121,190)

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Memristors, resistive memory, resistive switching, variability, coefficient of variation, statistical analysis

4.

Impact of the W Etching Process on the Resistive Switching Properties of Tin/Ti/Hfo2/W Memristors

Number of pages: 4 Posted: 25 Apr 2023
Mercedes Saludes-Tapia, Francesca Campabadal, Enrique A. Miranda and Mireia B. Gonzalez
Microelectronics Institute of Barcelona, Microelectronics Institute of Barcelona, Autonomous University of Barcelona and Microelectronics Institute of Barcelona
Downloads 37 (1,222,651)

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breakdown voltage, dry etching, HfO2, memristor, Resistive Switching, W, wet etching

5.

Cycle-to-Cycle Variability Analysis of Ti/Al2o3-Based Memristors

Number of pages: 11 Posted: 06 Jun 2023
Julius Rasbach, Mercedes Saludes-Tapia, Mireia B. Gonzalez and Francesca Campabadal
Microelectronics Institute of Barcelona, Microelectronics Institute of Barcelona, Microelectronics Institute of Barcelona and Microelectronics Institute of Barcelona
Downloads 35 (1,249,711)

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Al2O3, Correlation plots, Memristors, Resistive Switching, Variability

6.

Thickness-dependent resistive switching in engineered TiN/Ti/HfO2/W memristors

Number of pages: 15 Posted: 21 Jan 2026
Antonio Lopez, Mireia B. Gonzalez, Antonio Cantudo, Mercedes Saludes-Tapia, P. Ríos, Francisco Jimenez-Molinos, Juan B. Roldán and Marco Antonio Villena
affiliation not provided to SSRN, Microelectronics Institute of Barcelona, affiliation not provided to SSRN, Microelectronics Institute of Barcelona, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Granada and affiliation not provided to SSRN
Downloads 30 (1,332,057)

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Memristors, resistive memory, kinetic Monte Carlo simulation, titanium electrode, dielectric engineering

7.

Reset Transition in Hfo2-Based Memristors Using a Constant Power Signal

Number of pages: 25 Posted: 26 Sep 2024
Hector Garcia, Guillermo Vinuesa, Mireia B. Gonzalez, Francesca Campabadal, Helena Castán and Salvador Dueñas
affiliation not provided to SSRN, affiliation not provided to SSRN, Microelectronics Institute of Barcelona, Microelectronics Institute of Barcelona, affiliation not provided to SSRN and affiliation not provided to SSRN
Downloads 30 (1,318,317)

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Memristor, Resistive switching, Reset transition, Hafnium oxide

8.

Modeling and Simulation of Successive Breakdown Events in Thin Gate Dielectrics Using Standard Reliability Growth Models

Number of pages: 9 Posted: 06 Jun 2023
Enrique A. Miranda, Fernando Aguirre, E. Salvador, Mireia B. Gonzalez, Francesca Campabadal and Jordi Suñé
Autonomous University of Barcelona, Autonomous University of Barcelona, Autonomous University of Barcelona, Microelectronics Institute of Barcelona, Microelectronics Institute of Barcelona and Autonomous University of Barcelona
Downloads 22 (1,436,435)

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dielectric breakdown, oxide breakdown, MOS, MIM, oxide reliability