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Fernando Aguirre

Autonomous University of Barcelona

Plaça Cívica

Cerdañola del Valles

Barcelona, 08193

Spain

  • Autonomous University of Barcelona

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Scholarly Papers (1)

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Modeling and Simulation of Successive Breakdown Events in Thin Gate Dielectrics Using Standard Reliability Growth Models

Number of pages: 9 Posted: 06 Jun 2023
Enrique A. Miranda, Fernando Aguirre, E. Salvador, Mireia B. Gonzalez, Francesca Campabadal and Jordi Suñé
Autonomous University of Barcelona, Autonomous University of Barcelona, Autonomous University of Barcelona, Microelectronics Institute of Barcelona, Microelectronics Institute of Barcelona and Autonomous University of Barcelona
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Abstract:

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dielectric breakdown, oxide breakdown, MOS, MIM, oxide reliability