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Relative gold impurity concentration and laser annealing effects on carrier mobility and lifetime in hyperdoped silicon studied by femtosecond laser optical pump/THz probe method

Number of pages: 13 Posted: 12 Sep 2025

Sergey Ivanovich Kudryashov, Ivan Podlesnykh, P.A. Chizhov, V.V. Bulgakova, Aleksandr Ushakov, Yu.G. Goncharov, Valery A. Dravin, George Krasin and Michael S. Kovalev

affiliation not provided to SSRN, Bauman Moscow State Technical University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Bauman Moscow State Technical University

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V.V. Bulgakova

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Scholarly Papers (1)

Relative gold impurity concentration and laser annealing effects on carrier mobility and lifetime in hyperdoped silicon studied by femtosecond laser optical pump/THz probe method

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