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SHANSHAN HU

State University of New York (SUNY), Stony Brook

Health Science Center

Stony Brook, NY 11794

United States

SCHOLARLY PAPERS

2

DOWNLOADS

96

TOTAL CITATIONS

0

Scholarly Papers (2)

1.

Stacking Fault Analysis for the Early-Stages of PVT Growth of 4H-SiC Crystals

Number of pages: 17 Posted: 07 Oct 2025
State University of New York (SUNY), Stony Brook, State University of New York (SUNY), Stony Brook, State University of New York (SUNY), Stony Brook, State University of New York (SUNY), Stony Brook, State University of New York (SUNY), Stony Brook, State University of New York (SUNY), Stony Brook - Department of Materials Science and Chemical Engineering, State University of New York (SUNY), Stony Brook, Brookhaven National Laboratory and Brookhaven National Laboratory
Downloads 61 (970,490)

Abstract:

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Stacking fault formation, SiC, PVT, early-stage growth

2.

Synchrotron X-ray topography analysis of the distribution and formation mechanisms of low angle grain boundaries in PVT-Grown 4H-SiC Crystal

Number of pages: 9 Posted: 14 Feb 2026
State University of New York (SUNY), Stony Brook, State University of New York (SUNY), Stony Brook, State University of New York (SUNY), Stony Brook, State University of New York (SUNY), Stony Brook, State University of New York (SUNY), Stony Brook - Department of Materials Science and Chemical Engineering, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and State University of New York (SUNY), Stony Brook
Downloads 35 (1,318,317)

Abstract:

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4H-SiC, Low-angle grain boundary, Synchrotron x-ray topography