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Dae Hwan Kim

affiliation not provided to SSRN

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High-Performance Short-Channel Self-Aligned Top-Gate InSnZnO TFTs with a Stacked Al2O3/SiO2 Gate Dielectric: Elucidating the Enhancement Mechanisms

Number of pages: 42 Posted: 22 Dec 2025
Dongwook Shin, Sein Lee, Jeong-Min Park, Junseo Lee, Wooho Ham, Sohyung Lee, Byung-Du Ahn, Dae Hwan Kim, Jong-Uk Bae, YoungSeok Choi and Jang-Yeon Kwon
Yonsei University, Yonsei University, Yonsei University, Yonsei University, Yonsei University, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Yonsei University
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Abstract:

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short channel, self-aligned top-gate thin-film transistor, oxide semiconductor, Indium tin zinc oxide (ITZO), heterostacked Al2O3/SiO2 gate insulator (GI), interface defect passivation