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Yingxin Cui

Shandong University

27 Shanda Nanlu

South Rd.

Jinan, SD 250100

China

SCHOLARLY PAPERS

1

DOWNLOADS

41

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0

Scholarly Papers (1)

1.

Effects of wire bonding pressure and solder material on the reliability of TO-247 packaged SiC MOSFET under power cycling

Number of pages: 20 Posted: 09 Jan 2026
Shandong University, Shandong University, Shandong University, Universiti Sains Malaysia (USM), Shandong University and Shandong University
Downloads 41 (1,196,171)

Abstract:

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SiC MOSFET, Power cycling, Bonding wire cracks, Solder void