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Immobilization of Partial Dislocations Bounding Double Shockley Stacking Faults in 4h-Sic Observed by in Situ Synchrotron X-Ray Topography

27 Pages Posted: 12 May 2021 Publication Status: Under Review

See all articles by Fumihiro Fujie

Fumihiro Fujie

Nagoya University - Department of Materials Process Engineering

Shunta Harada

Nagoya University - Department of Materials Process Engineering

Hiromasa Suo

Showa Denko K. K.

Balaji Raghothamachar

State University of New York (SUNY), Stony Brook - Department of Materials Science and Chemical Engineering

Michael Dudley

State University of New York (SUNY) - Department of Materials Science and Chemical Engineering

Kenji Hanada

Aichi Science and Technology Foundation - Aichi Synchrotron Radiation Center

Haruhiko Koizumi

Nagoya University - Center for Integrated Research of Future Electronics (CIRFE)

Tomohisa Kato

National Institute of Advanced Industrial Science and Technology (AIST)

Miho Tagawa

Nagoya University - Department of Materials Process Engineering

Toru Ujihara

Nagoya University - Department of Materials Process Engineering

Abstract

The expansion of double Shockley stacking faults (DSFs) in an n-type 4H-SiC substrate with a nitrogen concentration of 3.9×10 19 cm −3 was investigated using in situ synchrotron X-ray topography. DSF expansion was observed to be suppressed and immobilized above 1590 K, along with the partial dislocation (PD) shape being changed from a straight to zig-zag configuration. For a different heating process (higher heating rate), the PDs could continue to expand, even above 1590 K. Ex situ topography experiments revealed that the DSFs close to the specimen surface expanded widely, although those expanding toward the specimen interior became immobile. One possible mechanism for this immobilization was proposed, where the core structural changes from a Si-core to the C-core by climb motion induced by the interaction between the PDs and point defects (C interstitials).

Suggested Citation

Fujie, Fumihiro and Harada, Shunta and Suo, Hiromasa and Raghothamachar, Balaji and Dudley, Michael and Hanada, Kenji and Koizumi, Haruhiko and Kato, Tomohisa and Tagawa, Miho and Ujihara, Toru, Immobilization of Partial Dislocations Bounding Double Shockley Stacking Faults in 4h-Sic Observed by in Situ Synchrotron X-Ray Topography. Available at SSRN: https://ssrn.com/abstract=3844697 or http://dx.doi.org/10.2139/ssrn.3844697

Fumihiro Fujie (Contact Author)

Nagoya University - Department of Materials Process Engineering ( email )

Nagoya
Japan

Shunta Harada

Nagoya University - Department of Materials Process Engineering

Nagoya
Japan

Hiromasa Suo

Showa Denko K. K.

1-13-9, Shiba Daimon
Tokyo, 105-8518
Japan

Balaji Raghothamachar

State University of New York (SUNY), Stony Brook - Department of Materials Science and Chemical Engineering

Health Science Center
Stony Brook, NY 11794
United States

Michael Dudley

State University of New York (SUNY) - Department of Materials Science and Chemical Engineering

Stony Brook, NY
United States

Kenji Hanada

Aichi Science and Technology Foundation - Aichi Synchrotron Radiation Center

Aichi, 489-0965
Japan

Haruhiko Koizumi

Nagoya University - Center for Integrated Research of Future Electronics (CIRFE)

Nagoya, 464-8601
Japan

Tomohisa Kato

National Institute of Advanced Industrial Science and Technology (AIST)

1-3-1 Kasumigaseki
Chiyoda-ku
Tokyo, 100-8921
Japan

Miho Tagawa

Nagoya University - Department of Materials Process Engineering

Nagoya
Japan

Toru Ujihara

Nagoya University - Department of Materials Process Engineering

Nagoya
Japan

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