Rules for the Crystallite Size and Dislocation Density Evolution in Phases During α-ω Transformation in Zr Under High-Pressure and Severe Plastic Flow
34 Pages Posted: 31 Jan 2025 Publication Status: Accepted
Abstract
The first in-situ X-ray diffraction (XRD) study of the evolution of the crystallite size and dislocation density in phases during plastic strain-induced phase transformation (PT) is performed utilizing α-ω PT in strongly pre-deformed commercially pure Zr as an important example. Rough diamond anvils (rough-DA) are introduced to intensify all occurring processes during heterogeneous compression of Zr in a diamond anvil cell (DAC). The main rule is found that during α-ω PT the crystallite size and dislocation density in ω-Zr depend solely on the volume fraction of ω-Zr and are independent of pressure, plastic strain tensor, its path, and initial nanostructure. Crystallite size in ω-Zr increases from 10 to 60 nm during the PT, while dislocation density reduces from 1.83×10^15/m2 to 0.6×10^15/m2. Rough-DA produce a steady nanostructure in α-Zr before PT with smaller crystallite size and larger dislocation density than smooth-DA, leading to a reduction of the minimum pressure for α-ω PT to a record value 0.67 GPa, 9 times smaller than under hydrostatic loading and 5.1 times lower than the phase equilibrium pressure. In addition to strain, the kinetics of strain-induced PT unexpectedly depends on time. Also, strain-controlled part of kinetics is zero order, in contrast to the first-order kinetics with smooth-DA. The obtained results open a new window for understanding the mutual effects of nanostructure evolution and PT during severe plastic flow in various technological and natural processes. They may bring up economic strategies of producing nanocomposites and single-phase nanostructured materials with optimal properties.
Keywords: Severe plastic deformations, High pressure, Phase transformation, Nanostructure evolution, In-situ synchrotron X-ray diffraction, Dislocation density, Crystalline size, Kinetics
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