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Yuan Tian

Fudan University

Beijing West District Baiyun Load 10th

Shanghai, 100045

China

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First-principles study of hydrogen passivation of dangling-bond and NBOHC defects in SiC/SiO2/ZrO2 gate-stack interfaces

Number of pages: 8 Posted: 13 May 2026
Yuan Tian, Jiajie Fan and Hong-Ping Ma
Fudan University, Fudan University and Fudan University
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Abstract:

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4H-SiC MOSFET, SiC/High-𝑘 Gate stack, Hydrogen passivation, Si dangling bond, Interface defect, First-principles calculation