default author photo

Jiajie Fan

Fudan University

Beijing West District Baiyun Load 10th

Shanghai, 100045

China

SCHOLARLY PAPERS

3

DOWNLOADS

149

TOTAL CITATIONS

1

Scholarly Papers (3)

1.

High-Temperature Deformation Behavior of Sintered Nanocu Paste Used in Power Electronics Packaging: A Constitutive Modeling and Stochastically Equivalent Finite Element Characterization

Number of pages: 18 Posted: 09 Sep 2022
Fudan University, Delft University of Technology, Southern University of Science and Technology, Delft University of Technology, Aalborg University, Lamar University, Delft University of Technology and Fudan University
Downloads 72 (867,774)

Abstract:

Loading...

Power electronics packaging, NanoCu paste sintering, High-temperature tensile test, Constitutive modeling, Stochastically equivalent finite element, Random void morphology

2.

High-Temperature Nanoindentation Characterization of Sintered Nano-Copper Particles Used in High Power Electronics Packaging

Number of pages: 16 Posted: 27 Sep 2021
Fudan University, Hohai University - School of Mechanical and Electrical Engineering, Nanyang Technological University (NTU) - School of Materials Science and Engineering, Delft University of Technology, Delft University of Technology, Lamar University and Delft University of Technology
Downloads 59 (970,490)
Citation 1

Abstract:

Loading...

Power electronics packaging, Nano-copper sintering, Nanoindentation, High-temperature creep, Reliability

3.

First-principles study of hydrogen passivation of dangling-bond and NBOHC defects in SiC/SiO2/ZrO2 gate-stack interfaces

Number of pages: 8 Posted: 13 May 2026
Yuan Tian, Jiajie Fan and Hong-Ping Ma
Fudan University, Fudan University and Fudan University
Downloads 18 (1,500,778)

Abstract:

Loading...

4H-SiC MOSFET, SiC/High-𝑘 Gate stack, Hydrogen passivation, Si dangling bond, Interface defect, First-principles calculation