Beijing West District Baiyun Load 10th
Shanghai, 100045
China
Fudan University
Post-deposition oxygen annealing, Gallium oxide, Oxygen vacancy, Optical bandgap, Band alignment
4H-SiC homoepitaxial layer, CVD reactor, Rotational speed, Quality, defects
Crystalline phase, Gallium oxide thin film, Solar blind photodetectors.
Ga2O3/GaN heterojunction, post-annealing process, solar blind photodetectors
3D tubular graphene sponge, PEDOT:PSS, Ag NWs/CNTs based stretchable electrodes, flexible pressure-temperature sensing, mutually noninterfering
4H-SiC MOSFET, SiC/High-𝑘 Gate stack, Hydrogen passivation, Si dangling bond, Interface defect, First-principles calculation
