default author photo

Ruo-Yun Yang

Fudan University

Beijing West District Baiyun Load 10th

Shanghai, 100045

China

SCHOLARLY PAPERS

1

DOWNLOADS

162

TOTAL CITATIONS

0

Scholarly Papers (1)

Actions:
Email selected abstracts
1.

Temperature-Dependent Oxygen Annealing Effect on the Properties of Ga2o3 Thin Film Deposited by Atomic Layer Deposition

Number of pages: 28 Posted: 04 May 2022
Lin Gu, Hong-Ping Ma, Yi Shen, Jie Zhang, Wen-Jie Chen, Ruo-Yun Yang, Fanzhengshu Wu, Lei Yang, Yu-Hang Zeng, Xi-Rui Wang, Jing-Tao Zhu and Qing-Chun Zhang
Fudan University, Fudan University, Fudan University, Fudan University, Fudan University, Fudan University, Fudan University, affiliation not provided to SSRN, Fudan University, Fudan University, Tongji University and Fudan University
Downloads 162 (464,454)

Abstract:

Loading...

Post-deposition oxygen annealing, Gallium oxide, Oxygen vacancy, Optical bandgap, Band alignment