Ke-Feng Dai

Jihua Laboratory

Foshan, 528000

China

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Insights on the Quality of 4h-Sic Layers Epitaxially Grown on Homogeneous Substrates by Changing the Rotational Speed of Susceptor in the Cvd Reactor

Number of pages: 24 Posted: 26 Jul 2023
Zhuo-Rui Tang, Lei Jin, Lin Gu, Ke-Feng Dai, Chao-Bin Mao, San-Zhong Wu, Jiajie Fan, Hong-Ping Ma and Guoqi Zhang
Fudan University, affiliation not provided to SSRN, Fudan University, Jihua Laboratory, Jihua Laboratory, Jihua Laboratory, Fudan University, Fudan University and Delft University of Technology
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Abstract:

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4H-SiC homoepitaxial layer, CVD reactor, Rotational speed, Quality, defects