Beijing West District Baiyun Load 10th
Shanghai, 100045
China
Fudan University
4H-SiC homoepitaxial layer, CVD reactor, Rotational speed, Quality, defects
4H-SiC epitaxial layer, Multi-physics simulation, CVD growth, Machine Learning, Optimization
Elastomer, Constitutive model, Inverse Langevin Chain Statistics, Thermodynamics, Invariants
SiC, CNT, field emission, emission stability, interface engineering