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Jiajie Fan

Fudan University

Beijing West District Baiyun Load 10th

Shanghai, 100045

China

SCHOLARLY PAPERS

4

DOWNLOADS

238

TOTAL CITATIONS

0

Scholarly Papers (4)

1.

Insights on the Quality of 4h-Sic Layers Epitaxially Grown on Homogeneous Substrates by Changing the Rotational Speed of Susceptor in the Cvd Reactor

Number of pages: 24 Posted: 26 Jul 2023
Fudan University, affiliation not provided to SSRN, Fudan University, Jihua Laboratory, Jihua Laboratory, Jihua Laboratory, Fudan University, Fudan University and Delft University of Technology
Downloads 99 (694,528)

Abstract:

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4H-SiC homoepitaxial layer, CVD reactor, Rotational speed, Quality, defects

2.

Optimizing the Chemical Vapor Deposition Process of 4h-Sic Epitaxial Layer Growth with Machine-Learning-Assisted Multiphysics Simulations

Number of pages: 46 Posted: 04 Jan 2024
Fudan University, Northeastern University (USA), affiliation not provided to SSRN, Foshan University, Fudan University, Fudan University and Delft University of Technology
Downloads 80 (809,932)

Abstract:

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4H-SiC epitaxial layer, Multi-physics simulation, CVD growth, Machine Learning, Optimization

3.

A New Physics-motivated Constitutive Model of Hyperelastic Polymer Networks

Number of pages: 36 Posted: 26 Sep 2025
Zichuan Li, Jiajie Fan and Guoqi Zhang
affiliation not provided to SSRN, Fudan University and Delft University of Technology
Downloads 34 (1,263,436)

Abstract:

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Elastomer, Constitutive model, Inverse Langevin Chain Statistics, Thermodynamics, Invariants

4.

The Transition from Geometric to Interfacial Dominance in the Field Emission of SiC-Coated Carbon Nanotubes

Number of pages: 21 Posted: 05 Sep 2025
Fudan University, Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Zhejiang Ocean University, Zhejiang Ocean University, Fudan University and Wenzhou Medical University
Downloads 25 (1,385,945)

Abstract:

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SiC, CNT, field emission, emission stability, interface engineering