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Yaozong Zhong

affiliation not provided to SSRN

SCHOLARLY PAPERS

1

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28

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0

Scholarly Papers (1)

1.

Effective Removal of ICP Etching Damage at the GaN Regrowth Interface through MOCVD In-situ Cleaning

Number of pages: 27 Posted: 14 May 2026
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Science and Technology of China (USTC) - School of Nano-Tech and Nano-Bionics and Suzhou Laboratory
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Abstract:

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GaN regrowth, Interface, Etching damage, TBCl in-situ cleaning, PN diode