AlN on Si, polarity, antiphase boundaries, molecular beam epitaxy
Ohmic contact, surface oxidation, p-InGaN/GaN, Interface, Pd/Pt/Au
heterojunction bipolar transistors, temperature-dependence, current gain, turn-on voltages, MOCVD
ultraviolet lasers, strain relaxation, critical thickness
n-AlGaN, ohmic contact, ICP etching, xps
3D CWT, 3D coupled-wave, Second order DFB, GaN laser, blue laser, green laser
HBT, current gain, p-GaAsSb, V/III ratio, MOCVD
GaN regrowth, Interface, Etching damage, TBCl in-situ cleaning, PN diode
Circular GratingsHankel WaveDispersion RelationBloch TheoremEnergy Band