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Ulrich Kentsch

Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research

Dresden

Germany

SCHOLARLY PAPERS

7

DOWNLOADS

210

TOTAL CITATIONS

0

Scholarly Papers (7)

1.

Achieving Ultralow Contact Resistivity in Si via Te Hyperdoping and Millisecond Post-Metallization Annealing

Number of pages: 22 Posted: 03 Jun 2024
Sichuan Normal University, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Sichuan Normal University, Sichuan Normal University, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research, Sichuan Normal University, Sichuan Normal University, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research and Sichuan Normal University
Downloads 60 (961,006)

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Contact resistance, post-metallization annealing, ion implantation, deep-level impurity, Rutherford backscattering spectrometry/channeling

2.

Strong Spin-Orbital Coupling and Robust Surface States in SrirO 3 Films: Confirmation by Increasing Lattice Disorder

Number of pages: 27 Posted: 06 Dec 2021
Guangdong Academy of Sciences (GDAS) - Institute of Semiconductors, National Cheng Kung University - Department of Physics, Tribhuvan University - Central Department of Physics, South China Normal University - Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, National Chiao Tung University - Department of Materials Science and Engineering, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research, National Tsing Hua University - Department of Physics, National Chiao Tung University - Department of Materials Science and Engineering, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research and Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research
Downloads 35 (1,249,711)

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ion irradiation, complex oxide, continue defect tuning, phase transition, metal-insulator transition, insulator-metal transition, spin-orbital coupling

3.

Tailoring optical properties of AlN films through argon ion implantation: Correlation between displacement damage and sub-bandgap absorption

Number of pages: 33 Posted: 03 Mar 2026
Sichuan Normal University, Sichuan Normal University, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), affiliation not provided to SSRN, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research, Sichuan Normal University, Sichuan Normal University, Sichuan Normal University, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research, Dongguan Songshan Lake Central Hospital Department of Clinical Laboratory, Sichuan Normal University and Sichuan Normal University
Downloads 30 (1,318,317)

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Aluminum nitride, ion implantation, radiation damage, defect evolution, sub-bandgap absorption, dielectric properties

4.

Tunable Magneto-Transport Properties in Ultra-High Bi-Doped Si Prepared by Liquid Phase Epitaxy

Number of pages: 17 Posted: 17 Oct 2023
affiliation not provided to SSRN, Sichuan Normal University, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research, Sichuan Normal University and Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research
Downloads 28 (1,345,526)

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magneto-transport properties, hyperdoping, liquid phase epitaxy regrowth, Bi donor activation, ion-implantation

5.

Prelithiation of Silicon Thin Film Anodes Using Ion Implantation for Lithium Ion Batteries

Number of pages: 22 Posted: 11 Aug 2025
affiliation not provided to SSRN, affiliation not provided to SSRN, Fraunhofer IZM, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research and Helmholtz-Zentrum Dresden-Rossendorf (HZDR)
Downloads 26 (1,372,601)

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lithium ion battery, Si anode, prelithiation, ion implantation, lithium loss, SEI

6.

Determining the Curie Temperature of Ferromagnetic (Ga,Mn)P Prepared by Ion Implantation and Pulsed Laser Melting

Number of pages: 11 Posted: 28 Dec 2023
Sichuan Normal University, Sichuan Normal University, Dongguan Songshan Lake Central Hospital Department of Clinical Laboratory, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research, Sichuan Normal University, Sichuan Normal University, Sichuan Normal University, Sichuan Normal University and Sichuan Normal University
Downloads 22 (1,424,331)

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magnetic properties, ion implantation, electrical transport, ferromagnetic, III-V dilute ferromagnetic semiconductors (DFS)

7.

Ion-Beam-Engineered Ag-Cu Alloy Films on PET as Flexible and Reusable SERS Substrates ​

Number of pages: 32 Posted: 01 May 2026
University of Petroleum and Energy Studies (UPES) - UPES, University of Petroleum and Energy Studies (UPES) - UPES, University of Hyderabad, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research, Jawaharlal Nehru Centre for Advanced Scientific Research, University of Hyderabad, University of Delhi, Deutsches Elektronen-Synchrotron and University of Petroleum and Energy Studies (UPES) - UPES
Downloads 9 (1,548,648)

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plasmonic, SERS, Partially Embedded Nanostructures, Ion Irradiation