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Jianqi Zhu

Sichuan Normal University

China

  • Sichuan Normal University

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Scholarly Papers (1)

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Achieving Ultralow Contact Resistivity in Si via Te Hyperdoping and Millisecond Post-Metallization Annealing

Number of pages: 22 Posted: 03 Jun 2024
Hang Liu, Yunxia Zhou, Mohd Shaikh, Yijia Huang, Jianqi Zhu, R. Heller, Ulrich Kentsch, Ling Li, Mingyang Tian, Shengqiang Zhou and Mao Wang
Sichuan Normal University, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Sichuan Normal University, Sichuan Normal University, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research, Sichuan Normal University, Sichuan Normal University, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) - Institute of Ion Beam Physics and Materials Research and Sichuan Normal University
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Abstract:

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Contact resistance, post-metallization annealing, ion implantation, deep-level impurity, Rutherford backscattering spectrometry/channeling