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Kun Xu

Chinese Academy of Sciences (CAS) - Nanofabrication facility

Suzhou, Jiangsu 215123

China

  • Chinese Academy of Sciences (CAS) - Nanofabrication facility

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Band Alignment of Ultrawide Bandgap ε -Ga 2O 3/H-BCN Heterojunction Epitaxially Grown by Metalorganic Chemical Vapor Deposition

Number of pages: 17 Posted: 13 Dec 2021
Xin Zhou, Li Zhang, Xiaodong Zhang, Yongjian Ma, Xing Wei, Tiwei Chen, Wenbo Tang, Kun Xu, Zhongming Zeng, Xinping Zhang, Houqiang Fu and Baoshun Zhang
Nanjing University of Science and Technology - School of Material Science and Engineering, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS), Nanjing University of Science and Technology - School of Material Science and Engineering, Iowa State University and Nanjing University of Science and Technology - School of Material Science and Engineering
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band alignment, epsilon gallium oxide, hexagonal boron carbonitride, Heterojunction