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Tiwei Chen

Chinese Academy of Sciences (CAS) - Nanofabrication facility

Suzhou, Jiangsu 215123

China

SCHOLARLY PAPERS

2

DOWNLOADS

132

TOTAL CITATIONS

1

Scholarly Papers (2)

1.

Improving the Quality of Mocvd-Grown Α-Ga2o3by Introducing an (Alxga1-X)2o3buffer on M-Plane Sapphire

Number of pages: 18 Posted: 18 Jan 2025
Shandong University, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Shandong University, Chinese Academy of Sciences (CAS) and Nanjing University of Science and Technology - School of Material Science and Engineering
Downloads 71 (875,328)

Abstract:

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α-Ga2O3, (AlxGa1-x)2O3 buffer, dislocation, surface roughness

2.

Band Alignment of Ultrawide Bandgap ε -Ga 2O 3/H-BCN Heterojunction Epitaxially Grown by Metalorganic Chemical Vapor Deposition

Number of pages: 17 Posted: 13 Dec 2021
Nanjing University of Science and Technology - School of Material Science and Engineering, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS) - Nanofabrication facility, Chinese Academy of Sciences (CAS), Nanjing University of Science and Technology - School of Material Science and Engineering, Iowa State University and Nanjing University of Science and Technology - School of Material Science and Engineering
Downloads 61 (961,006)
Citation 1

Abstract:

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band alignment, epsilon gallium oxide, hexagonal boron carbonitride, Heterojunction