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Fang Wang

Tianjin University of Technology

School of Management, Tianjin University of Techn

Tianjin, 300384

China

  • Tianjin University of Technology

SCHOLARLY PAPERS

9

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292

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0

Scholarly Papers (9)

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1.

Controlled Synthesis of High Crystallization Bi2o2se Film and its Photoelectric Properties

Number of pages: 21 Posted: 10 Aug 2022
Peng Chen, Xin Shan, Xin Lin, Heyan Yuan, Yangyang Xie, Fang Wang and kailiang zhang
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology and Tianjin University of Technology
Downloads 91 (742,061)

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Bi2O2Se, Space-compression, High crystallization, Controlled synthesis, Photoresponsivity

2.

Effect of La Doping on the Energy Storage Performance of Ferroelectric BaZr 0.35 Ti 0.65 O 3  Thin Films

Number of pages: 20 Posted: 13 Sep 2025
Yinjian Zhang, Zheng Sun, Zhengfei Yu, Haiyan Wang, Yemei Han, Lingxia Li, Fang Wang, Kai Hu and Kailiang Zhang
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University, Tianjin University of Technology, Tianjin University of Technology and Tianjin University of Technology
Downloads 36 (1,277,121)

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Ferroelectric thin films, Doping, BZT35-xLa, Energy Storage

3.

Room-temperature low-magnetic-field switchable ferroelectric transistor

Number of pages: 37 Posted: 22 Sep 2025
Yemei Han, Yuming Chen, Lili Guo, Xiurui Chen, Haocheng Leng, Kai Hu, Zheng Sun, Fang Wang and kailiang zhang
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology and Tianjin University of Technology
Downloads 34 (1,277,121)

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Ferroelectric field effect transistor, Transport characteristics, Magnetic field, Hf0.5Zr0.5O2

4.

Bias Voltage Modulated Electric Transport Properties in Hf0.5zr0.5o2/Fe65co35 Films

Number of pages: 49 Posted: 29 Jul 2024
Lili Guo, Yemei Han, Yuming Chen, Xiurui Chen, Kai Hu, Zheng Sun, Fang Wang, Haitao Wu and kailiang zhang
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Yantai University and Tianjin University of Technology
Downloads 31 (1,304,549)

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Electric transport properties, Multiferroicity, Ferroelectric properties, Magnetoelectric coupling effect, Film size effect

5.

Room-Temperature Multiferroicity and Magnetoelectric Couplings in (Co0.75al0.25)2(Fe0.75mg0.25)O4 Spinel Films

Number of pages: 20 Posted: 15 Feb 2022
Yemei Han, Xianming Ren, Xuegang Chen, Yi Fu, Fang Wang, Kai Hu, Zheng Sun and Kailiang Zhang
Tianjin University of Technology, Tianjin University of Technology, Anhui University, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology and Tianjin University of Technology
Downloads 24 (1,399,036)

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Multiferroicity, Magnetoelectric coupling, Spinel films, Electric field control of magnetism, Atomic ordering, Charge modulation

6.

Hf 0.5Zr0.5O2/Fe65Co35薄膜中电阻开关行为的偏置电压控制

Number of pages: 21 Posted: 22 Apr 2024
Lili Guo, Yemei Han, Yuming Chen, Xiurui Chen, Kai Hu, Zheng Sun, Fang Wang, Haitao Wu and kailiang zhang
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Yantai University and Tianjin University of Technology
Downloads 23 (1,411,822)

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Resistance switching behavior, Film size effect, Multiferroicity, Ferroelectric properties, Magnetoelectric coupling

7.

Dual-Mode MoOx/Al2O3 Memristors with Ultra-Stable Switching Capability for High-Precision Reservoir Computing

Number of pages: 36 Posted: 08 Jan 2026
Shaojie Fan, Yuqing Fan, Fang Wang, Song Li, Linqing Zhou, Xiangjie Zhang, Zewen Li, Junqing Wei, Yuchan Wang, Zhitang Song, Lifeng Liu and kailiang zhang
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University, Chongqing University of Posts and Telecommunications, Chinese Academy of Sciences (CAS) - Shanghai Institute of Microsystem and Information Technology, Peking University - School of Integrated Circuits and Tianjin University of Technology
Downloads 18 (1,470,786)

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memristor, digital−analog integrated, synapse, reservoir computing

8.

Vacancy-Driven Resistive Switching Behavior Based on Wafer-Scale Mose2 Artificial Synapses for Neuromorphic Applications

Number of pages: 20 Posted: 11 Jun 2024
Jixiang Zhong, Xin Lin, Han Sun, Fang Wang, Kai Liu, Junqing Wei, Zewen Li, Yujing Ji, Peng Liu, Weili Liu and kailiang zhang
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Shenzhen Technology University, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, affiliation not provided to SSRN and Tianjin University of Technology
Downloads 18 (1,481,165)

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MoSe2, Wafer-scale, RS behavior mechanism, Vacancy, Artificial synapse

9.

High-Performance Reconfiguring Bilayer Mos2 Transistors Based on Multi-Pathway Charge-Injection Co-Regulation Mechanism

Number of pages: 22 Posted: 20 Aug 2025
Xin Lin, yi li, Zewen Li, Xiangjie Zhang, Junqing Wei, Hongling Guo, Lei Zheng, Fang Wang, Zhitang Song and kailiang zhang
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Chinese Academy of Sciences (CAS) - Shanghai Institute of Microsystem and Information Technology and Tianjin University of Technology
Downloads 17 (1,491,251)

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Bilayer MoS2, Schottky barrier, Finite element simulation, Bi-mono MoS2 junction, charge-injection mechanisms