Yujing Ji

Tianjin University of Technology

School of Management, Tianjin University of Techn

Tianjin, 300384

China

SCHOLARLY PAPERS

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Scholarly Papers (1)

1.

Vacancy-Driven Resistive Switching Behavior Based on Wafer-Scale Mose2 Artificial Synapses for Neuromorphic Applications

Number of pages: 20 Posted: 11 Jun 2024
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Shenzhen Technology University, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, affiliation not provided to SSRN and Tianjin University of Technology
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Abstract:

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MoSe2, Wafer-scale, RS behavior mechanism, Vacancy, Artificial synapse