Peng Liu

Tianjin University of Technology

School of Management, Tianjin University of Techn

Tianjin, 300384

China

  • Tianjin University of Technology

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Vacancy-Driven Resistive Switching Behavior Based on Wafer-Scale Mose2 Artificial Synapses for Neuromorphic Applications

Number of pages: 20 Posted: 11 Jun 2024
Jixiang Zhong, Xin Lin, Han Sun, Fang Wang, Kai Liu, Junqing Wei, Zewen Li, Yujing Ji, Peng Liu, Weili Liu and kailiang zhang
Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Shenzhen Technology University, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, Tianjin University of Technology, affiliation not provided to SSRN and Tianjin University of Technology
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Abstract:

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MoSe2, Wafer-scale, RS behavior mechanism, Vacancy, Artificial synapse