ELOG, MOCVD, graphene mask, dislocation density, air gap
HVPE-AlN, Vicinal substrates, V/III ratio, Surface morphology, Microstructure
Free-Standing GaN substrates, MOCVD, HEMTs, Carbon doping, Fe-diffusion stopper layer
III-V semiconductors, Crystal defects, Segregation, STEM
GaN film, grahene, A self-disappear-mask, epitaxial lateral overgrowth
gallium nitride (GaN), semi-insulating, N-face, ohmic contact, Ti Contact Layer, Annealing
PVT, expanding growth, surface energy, DFT
AlGaN, critical thickness, in-plane biaxial strain, bowing parameter, photoluminescence, reflectance
GaN, dialocation slip system, laser diodes, AlGaN layer
Al0.83In0.17N, MOCVD, V-pit, surface morphology, In-surfactant, parasitic reaction
