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Jianfeng Wang

affiliation not provided to SSRN

  • affiliation not provided to SSRN

SCHOLARLY PAPERS

3

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165

TOTAL CITATIONS

0

Scholarly Papers (3)

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1.

Research on the Epitaxial Growth of Power/Rf Hemt Structures on N-Gan and Fe-Doped Si-Gan Free-Standing Substrates by Mocvd

Number of pages: 11 Posted: 07 Nov 2024
xiao wang, Yumin Zhang, Mengyi Wang, Jianfeng Wang and Ke Xu
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Chinese Academy of Sciences (CAS)
Downloads 63 (942,565)

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Free-Standing GaN substrates, MOCVD, HEMTs, Carbon doping, Fe-diffusion stopper layer

2.

A Self-Disappear-Mask for Epitaxial Lateral Overgrowth of Gan Films

Number of pages: 9 Posted: 07 Nov 2022
Wangyibo Chen, Yu Xu, Bing Cao, Chinhua Wang, Jianfeng Wang and Ke Xu
Soochow University, Chinese Academy of Sciences (CAS), Soochow University, Soochow University, affiliation not provided to SSRN and Chinese Academy of Sciences (CAS)
Downloads 53 (1,031,043)

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GaN film, grahene, A self-disappear-mask, epitaxial lateral overgrowth

3.

Effect of Ti Contact Layer Thickness and Annealing on Ohmic Contacts to N-Face Fe-doped Semi-Insulating GaN

Number of pages: 8 Posted: 09 Oct 2025
Yuanhang Sun, Hao Zhou, Xinyu Hao, Zhengqian Lu, Yuning Wang, Jue-Min Yi, Yumin Zhang, Jianfeng Wang and Ke Xu
affiliation not provided to SSRN, Soochow University, affiliation not provided to SSRN, affiliation not provided to SSRN, Chinese Academy of Sciences (CAS), affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and Chinese Academy of Sciences (CAS)
Downloads 49 (1,086,013)

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gallium nitride (GaN), semi-insulating, N-face, ohmic contact, Ti Contact Layer, Annealing