affiliation not provided to SSRN
GeSn, tin segregation, droplet, Nanostructures, carrier distribution
Relaxed GeSn, Defects evolution, MBE, Segregation threshold
Sub-monolayer, InAs, Quantum Well, Lifetime, Carrier escape
A3. Molecular beam epitaxy, B2. Semiconducting germanium, A1. High resolution X-ray diffraction, B1. Germanium silicon alloys, B1. Alloys.
A1. Interfaces, A1. X-ray Diffraction, A3. Quantum wells, B1. SiGeSn alloys, A1. Absorption, A1. Emission
surface quantum dots, carrier injection, photoluminescence, hybrid nanostructures, quantum coupling