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M. Benamara

University of Arkansas

SCHOLARLY PAPERS

5

DOWNLOADS

238

TOTAL CITATIONS

0

Scholarly Papers (5)

1.

Sn-Guided Self-Grown Ge Stripes Banded by Gesn Nanowires: Formation Mechanism and Electric-Field-Induced Switching from P- to N-Type Conduction

Number of pages: 35 Posted: 03 May 2022
University of Arkansas, Fayetteville, Institute of Semiconductor Physics, NAS Ukraine, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Arkansas, University of Arkansas, Fayetteville and University of Arkansas for Medical Sciences
Downloads 73 (852,604)

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GeSn, tin segregation, droplet, Nanostructures, carrier distribution

Optical Spectroscopy of Excitons in Res2 Monolayers Grown by Chemical Vapor Deposition

Number of pages: 19 Posted: 29 Oct 2024
affiliation not provided to SSRN, University of Arkansas, Fayetteville, University of Arkansas, University of Arkansas, Fayetteville and affiliation not provided to SSRN
Downloads 30 (1,356,108)

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ReS2, excitons, phonons, PL, Absorption

Optical Spectroscopy of Excitons in Res2 Monolayers Grown by Chemical Vapor Deposition

Number of pages: 17 Posted: 25 Jun 2024
affiliation not provided to SSRN, affiliation not provided to SSRN, University of Arkansas, University of Arkansas, Fayetteville and affiliation not provided to SSRN
Downloads 23 (1,459,262)

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ReS2, Interlayer excitons, phonons, PL, absorption

3.

Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)

Number of pages: 18 Posted: 15 Jun 2025
University of Arkansas, University of Arkansas, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, University of Arkansas, Fayetteville and University of Arkansas for Medical Sciences
Downloads 49 (1,121,190)

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Relaxed GeSn, Defects evolution, MBE, Segregation threshold

4.

Depth-Dependent Photoluminescence Characteristic of Gesn/Sigesn Multi-Quantum Wells

Number of pages: 15 Posted: 07 Nov 2022
affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, Fayetteville and University of Arkansas for Medical Sciences
Downloads 38 (1,209,354)

Abstract:

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A1. Interfaces, A1. X-ray Diffraction, A3. Quantum wells, B1. SiGeSn alloys, A1. Absorption, A1. Emission

5.

Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42%

Number of pages: 15 Posted: 14 Mar 2026
University of Arkansas, University of Arkansas, University of Arkansas, University of Arkansas, University of Arkansas, University of Arkansas, University of Arkansas, University of Delaware, University of Delaware, University of Arkansas for Medical Sciences, University of Arkansas and University of Arkansas, Fayetteville
Downloads 25 (1,411,822)

Abstract:

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SiGeSn, Molecular beam epitaxy, Lattice-matched growth, Superlattices, Bandgap engineering