GeSn, tin segregation, droplet, Nanostructures, carrier distribution
ReS2, excitons, phonons, PL, Absorption
ReS2, Interlayer excitons, phonons, PL, absorption
Relaxed GeSn, Defects evolution, MBE, Segregation threshold
A1. Interfaces, A1. X-ray Diffraction, A3. Quantum wells, B1. SiGeSn alloys, A1. Absorption, A1. Emission
SiGeSn, Molecular beam epitaxy, Lattice-matched growth, Superlattices, Bandgap engineering