default author photo

F.M. de Oliveira

University of Arkansas

SCHOLARLY PAPERS

5

DOWNLOADS

229

TOTAL CITATIONS

0

Scholarly Papers (5)

Actions:
Email selected abstracts
1.

Sn-Guided Self-Grown Ge Stripes Banded by Gesn Nanowires: Formation Mechanism and Electric-Field-Induced Switching from P- to N-Type Conduction

Number of pages: 35 Posted: 03 May 2022
Andrian V. Kuchuk, P.M. Lytvyn, Yu.I. Mazur, H. Stanchu, S.V. Kondratenko, F.M. de Oliveira, S. V. Malyuta, M.D. Teodoro, M. Benamara, S.-Q. Yu and G. J. Salamo
University of Arkansas, Fayetteville, Institute of Semiconductor Physics, NAS Ukraine, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Arkansas, University of Arkansas, Fayetteville and University of Arkansas for Medical Sciences
Downloads 73 (852,604)

Abstract:

Loading...

GeSn, tin segregation, droplet, Nanostructures, carrier distribution

2.

Strain Relaxation and Defect Density Evolution with Thickness in Mbe Grown Ge0.85sn0.15 on Ge(001)

Number of pages: 18 Posted: 15 Jun 2025
Dinesh Baral, Nirosh M. Eldose, Diandian Zhang, Hryhorii Stanchu, F.M. de Oliveira, Serhii Kryvyi, Mohammad Zamani, M. Benamara, Yu.I. Mazur, Wei Du, S.-Q. Yu and G. J. Salamo
University of Arkansas, University of Arkansas, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, University of Arkansas, Fayetteville and University of Arkansas for Medical Sciences
Downloads 49 (1,121,190)

Abstract:

Loading...

Relaxed GeSn, Defects evolution, MBE, Segregation threshold

3.

Temperature Dependent Optical Properties of Ultrathin Inas Quantum Well

Number of pages: 11 Posted: 04 Sep 2024
Rahul Kumar, Yurii Maidaniuk, F.M. de Oliveira, Yu.I. Mazur and G. J. Salamo
affiliation not provided to SSRN, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN and University of Arkansas for Medical Sciences
Downloads 43 (1,145,425)

Abstract:

Loading...

Sub-monolayer, InAs, Quantum Well, Lifetime, Carrier escape

4.

Depth-Dependent Photoluminescence Characteristic of Gesn/Sigesn Multi-Quantum Wells

Number of pages: 15 Posted: 07 Nov 2022
Solomon Ojo, H. Stanchu, Sudip Acharya, Abdulla Said, Sylvester Amoah, M. Benamara, Chen Li, F.M. de Oliveira, Yu.I. Mazur, S.-Q. Yu and G. J. Salamo
affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, affiliation not provided to SSRN, University of Arkansas, Fayetteville and University of Arkansas for Medical Sciences
Downloads 39 (1,209,354)

Abstract:

Loading...

A1. Interfaces, A1. X-ray Diffraction, A3. Quantum wells, B1. SiGeSn alloys, A1. Absorption, A1. Emission

5.

Epitaxial Growth and Structural Evolution of Lattice-Matched SiGeSn/Ge Heterostructures with Si Composition up to 42%

Number of pages: 15 Posted: 14 Mar 2026
Diandian Zhang, Nirosh M. Eldose, Dinesh Baral, H. Stanchu, F.M. de Oliveira, Quang Minh Thai, M. Benamara, Haochen Zhao, Yuping Zeng, G. J. Salamo, Wei Du and S.-Q. Yu
University of Arkansas, University of Arkansas, University of Arkansas, University of Arkansas, University of Arkansas, University of Arkansas, University of Arkansas, University of Delaware, University of Delaware, University of Arkansas for Medical Sciences, University of Arkansas and University of Arkansas, Fayetteville
Downloads 25 (1,411,822)

Abstract:

Loading...

SiGeSn, Molecular beam epitaxy, Lattice-matched growth, Superlattices, Bandgap engineering