SKK Building, Katahira 2
Aoba-ku, Sendai, 980-8577
Japan
Tohoku University
Growth from melt (A2), single crystal growth (A2), impurities (A1), gallium compounds (B1)
A1.Oxide, A1.Computer simulation, A2.Bridgman technique, A2.Growth from melt, B1 Gallium compounds, B2 Semiconducting materials
Oxide, Computer simulation, Growth from melt
Neutron scintillator, Single crystal, LiCaAlF6, LiSrAlF6, Scintillation property
Nonstoichiometry, photoconversion, scintillator, eutectic, Raman Spectroscopy, energy transfer
phase‑separated crystal, eutectic, optical‑guiding crystal scintillator, neutron scintillator, thermoelectric, microstructure design
ruthenium alloys, refractory alloys, single-crystal growth, organic light-emitting diodes, resistive heating element
A1: Heat transfer, A2: Growth from melt, A2: Czochralski method, B1: Gallium compounds, B2: Semiconducting gallium compounds
A1. X-ray diffraction, A2.Single crystal growth, B1.Halides, B2.Scintillator materials, B3.Scintillators
La2Hf2O7 crystal, Near-infrared, Core heating method, Scintillator, Dosimetry
A1. Solid solutions A2. Growth from melt A2. Single crystal growth B1. Calcium compounds B1. Inorganic compounds B1. Perovskites
garnet, perovskites, luminescence, Raman spectroscopy, scintillator, Judd-Ofelt theory
inorganic phosphor, pump-probe absorption spectroscopy, free carrier plasma, multicomponent oxides, thermally-stimulated luminescence, positron annihilation lifetime spectroscopy
A1. Photoluminescence, A1.Ce3+ Doping, B1.Perovskite, B1.Fluorides, B2. VUV optical materials
optical thermometry, single crystals, micro-pulling-down method, fluorescence intensity ratio method
A2. Growth from melt, B1. Oxides, B2. Piezoelectric materials
A1. Radiation, A2. Single crystal growth, B1. Gadolinium compounds, B1. Oxides, B2. Scintillator materials, B3. Infrared devices