SKK Building, Katahira 2
Aoba-ku, Sendai, 980-8577
Japan
Tohoku University
Growth from melt (A2), single crystal growth (A2), impurities (A1), gallium compounds (B1)
A1.Oxide, A1.Computer simulation, A2.Bridgman technique, A2.Growth from melt, B1 Gallium compounds, B2 Semiconducting materials
Oxide, Computer simulation, Growth from melt
A1: Heat transfer, A2: Growth from melt, A2: Czochralski method, B1: Gallium compounds, B2: Semiconducting gallium compounds
La2Hf2O7 crystal, Near-infrared, Core heating method, Scintillator, Dosimetry