affiliation not provided to SSRN
Growth from melt (A2), single crystal growth (A2), impurities (A1), gallium compounds (B1)
A1.Oxide, A1.Computer simulation, A2.Bridgman technique, A2.Growth from melt, B1 Gallium compounds, B2 Semiconducting materials
Oxide, Computer simulation, Growth from melt
A1: Heat transfer, A2: Growth from melt, A2: Czochralski method, B1: Gallium compounds, B2: Semiconducting gallium compounds