University Park
Nottingham, NG8 1BB
United Kingdom
University of Nottingham
NiO/β-Ga2O3 heterojunction diodes, deep level transient spectroscopy, photoluminescence, Raman, electrical characteristics, modeling
InGaP, substrate orientation, defects, electrical characteristics, conduction mechanism, Photoluminescence
Infrared photodetector, Barriode detector, InAsSb absorber, Mid-wavelength, Deep-level transient spectroscopy
PVC, La2O3, Band gap, refractive index, Dispersion energy
Magnetic semiconductor, GaMnCrAs, modulated Photoreflectance, Band Anti-Crossing model
Polyvinylidene difluoride, MoO3/g-C3N4, Optical band gap, Refractive index